[CNX-Software] - Samsung UFS 4.0 storage to offer up to 4,200 MB/s read speeds, 1TB capacity

Samsung Electronics has unveiled its first Universal Flash Storage (UFS) 4.0 solution based on the company’s 7th-generation V-NAND and a proprietary controller allowing speeds of up to 23.2 gigabits per second (Gbps) per lane or double the previous UFS 3.1 solutions. In more practical terms, Samsung UFS 4.0 storage will deliver a sequential read speed of up to 4,200 MB/s and a sequential write speed of 2,800 MB/s, corresponding to about 2x and 1.6x faster speeds over UFS 3.1 storage. Samsung also claims that power efficiency has been enhanced with a sequential read speed of up to 6.0 MB/s per milliampere (mA), or about a 46-percent improvement over UFS 3.1. An advanced Replay Protected Memory Block (RPMB) is integrated into the chip to store important personal data that can only be read or written through authenticated access, and whose design is said to be 1.8 times more efficient. Samsung UFS [...]

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